THIN-FILM FORMING METHOD AND COPPER WIRING FILM FORMING METHOD

PROBLEM TO BE SOLVED: To reduce the conduction resistance of a contact hole or a via hole. SOLUTION: The space between a target 20 and a film formation object 17 is surrounded by an anode electrode 4, and the positive voltage, applied to the anode electrode 4 and the negative voltage, applied to the...

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Bibliographische Detailangaben

Hauptverfasser:	YOSHIHAMA TOMOYUKI, TOYODA SATOSHI, KODAMA YOHEI, ISHIKAWA MICHIO, ITSUDO SHIGEFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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