THIN-FILM FORMING METHOD AND COPPER WIRING FILM FORMING METHOD

PROBLEM TO BE SOLVED: To reduce the conduction resistance of a contact hole or a via hole. SOLUTION: The space between a target 20 and a film formation object 17 is surrounded by an anode electrode 4, and the positive voltage, applied to the anode electrode 4 and the negative voltage, applied to the film formation object 17 are controlled. While maintaining a state, wherein the deposition speed at the bottom of a shallow hole is higher than the etching speed, the etching speed is made not lower than the deposition speed at the bottom of a deep hole. A barrier film is not formed at the bottom of the deep hole; and the barrier film can be formed on the bottom of the shallow hole and the side faces of the deep hole and the shallow hole, so that the copper wiring film can be brought into direct contact with the electrically conductive material under the bottom of the deep hole, and the conduction resistance is reduced. COPYRIGHT: (C)2008,JPO&INPIT