GOLD ALLOY FOR CONNECTING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a gold alloy for connecting a semiconductor device in which breakage or stripping of a wire is prevented in heat cycle after bonding. SOLUTION: The gold alloy for connecting a semiconductor device consists of 0.01-2 mass% of Cu, 0.01-0.3 mass% of Ge, and the reminder of Au (a). Assuming a first additive element group contains total 1-100 mass ppm of one kind or two kinds of Be and In (b), a second additive element group contains total 1-100 mass ppm of one kind or more than one kind of Mg, Sn, Si, Ga, Bi and Sr (c), and a third additive element group contains total 1-50 mass ppm of one kind or two kinds of B and Li (d); any one or any two or three of the first, second and third additive element groups are added to the (a) alloy. COPYRIGHT: (C)2008,JPO&INPIT