PATTERN INSPECTION/MEASUREMENT DEVICE

PROBLEM TO BE SOLVED: To provide a pattern inspection/measurement technique capable of providing an SEM image high in S/N and small in in-view shading by minimizing change of an optical condition of a primary electron beam or omission of a secondary signal due to generation of an electric field orth...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TANIMOTO NORIFUMI, OMORI KIYOKO, TEI TOMOKI, MAKINO HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a pattern inspection/measurement technique capable of providing an SEM image high in S/N and small in in-view shading by minimizing change of an optical condition of a primary electron beam or omission of a secondary signal due to generation of an electric field orthogonal to the traveling direction of a primary electron beam present on a wafer surface, and of executing measurement of dimension and shape with high accuracy and high repeatability for a measurement object, and measurement of a defect inspection or the like. SOLUTION: This pattern inspection/measurement device is structured such that a secondary signal converging lens 69 is installed at a position of the crossover in the traveling direction of the primary electron beam, or on a path of a separated secondary signal by causing the secondary signal to spatially separate the primary electron beam by a Wien filter 18. By providing a means changing the setting of the secondary signal converging lens 69 in response to an optical condition of the primary electron beam (for instance, a retarding voltage, a charge control electrode or the like), an SEM image always preventing occurrence of in-view shading caused by omission of a secondary signal can be provided. COPYRIGHT: (C)2008,JPO&INPIT