EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT

PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surroundi...

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description PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surrounding portion of specified position of a compound semiconductor wafer having a compound semiconductor laminated layer on a semiconductor substrate to work the specified position cylindrically; irradiating a primary ion beam onto the specified cylindrical position to discharge a secondary ion; carrying out a mass spectrometry of the secondary discharged ion; and performing an evaluation of the compound semiconductor wafer, based on the result of the mass spectrometry. COPYRIGHT: (C)2008,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008016728A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008016728A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008016728A3</originalsourceid><addsrcrecordid>eNrjZAh0DXP0CXUM8fT3U_B1DfHwd1Hwd1Nw9vcN8A_1c1EIdvX1dPb3cwl1DvEPUgh3dHMNUnDEEPdxDAaKu_q4-rr6hfAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDAwsDQzNzIwtHY6IUAQAjkjAK</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT</title><source>esp@cenet</source><creator>OKUBO NOBUHIRO</creator><creatorcontrib>OKUBO NOBUHIRO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surrounding portion of specified position of a compound semiconductor wafer having a compound semiconductor laminated layer on a semiconductor substrate to work the specified position cylindrically; irradiating a primary ion beam onto the specified cylindrical position to discharge a secondary ion; carrying out a mass spectrometry of the secondary discharged ion; and performing an evaluation of the compound semiconductor wafer, based on the result of the mass spectrometry. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080124&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008016728A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080124&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008016728A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKUBO NOBUHIRO</creatorcontrib><title>EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surrounding portion of specified position of a compound semiconductor wafer having a compound semiconductor laminated layer on a semiconductor substrate to work the specified position cylindrically; irradiating a primary ion beam onto the specified cylindrical position to discharge a secondary ion; carrying out a mass spectrometry of the secondary discharged ion; and performing an evaluation of the compound semiconductor wafer, based on the result of the mass spectrometry. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAh0DXP0CXUM8fT3U_B1DfHwd1Hwd1Nw9vcN8A_1c1EIdvX1dPb3cwl1DvEPUgh3dHMNUnDEEPdxDAaKu_q4-rr6hfAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDAwsDQzNzIwtHY6IUAQAjkjAK</recordid><startdate>20080124</startdate><enddate>20080124</enddate><creator>OKUBO NOBUHIRO</creator><scope>EVB</scope></search><sort><creationdate>20080124</creationdate><title>EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT</title><author>OKUBO NOBUHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008016728A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>OKUBO NOBUHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKUBO NOBUHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT</title><date>2008-01-24</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surrounding portion of specified position of a compound semiconductor wafer having a compound semiconductor laminated layer on a semiconductor substrate to work the specified position cylindrically; irradiating a primary ion beam onto the specified cylindrical position to discharge a secondary ion; carrying out a mass spectrometry of the secondary discharged ion; and performing an evaluation of the compound semiconductor wafer, based on the result of the mass spectrometry. COPYRIGHT: (C)2008,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T16%3A04%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OKUBO%20NOBUHIRO&rft.date=2008-01-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008016728A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true