EVALUATION METHOD OF COMPOUND SEMICONDUCTOR WAFER AND SEMICONDUCTOR LASER ELEMENT

PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surroundi...

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1. Verfasser:	OKUBO NOBUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an evaluation method of a compound semiconductor wafer, which carries out an evaluation of a compound semiconductor wafer without reducing a production yield. SOLUTION: The evaluation method of a compound semiconductor wafer includes processes of: etching a surrounding portion of specified position of a compound semiconductor wafer having a compound semiconductor laminated layer on a semiconductor substrate to work the specified position cylindrically; irradiating a primary ion beam onto the specified cylindrical position to discharge a secondary ion; carrying out a mass spectrometry of the secondary discharged ion; and performing an evaluation of the compound semiconductor wafer, based on the result of the mass spectrometry. COPYRIGHT: (C)2008,JPO&INPIT