Au BONDING WIRE FOR SEMICONDUCTOR ELEMENT

Au BONDING WIRE FOR SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide an Au bonding wire for use in a semiconductor element which has high rupture strength and excellent loop characteristics, even if a diameter of the bonding wire is as small as 23 μm or less. SOLUTION: The Au bonding wire is made of Be of 4-7 mass ppm, Ca of 15-30 mas...

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Bibliographische Detailangaben
1. Verfasser: MIKAMI MICHITAKA
Format: Patent
Sprache:eng
Schlagworte:
ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
SEMICONDUCTOR DEVICES
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an Au bonding wire for use in a semiconductor element which has high rupture strength and excellent loop characteristics, even if a diameter of the bonding wire is as small as 23 μm or less. SOLUTION: The Au bonding wire is made of Be of 4-7 mass ppm, Ca of 15-30 mass ppm, Y of 15-30 mass ppm, Ce of 15-30 mass ppm, and the remaining of Au. It preferably contains further one or two of Mg, Si, Ge and Ga added by a total of 5-30 mass ppm. A total of elements other than Au is preferably less than 100 mass ppm. COPYRIGHT: (C)2008,JPO&INPIT