SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To realize a reduction in film thickness and an increase in capacity of a capacitor, and to improve reliability of an MIM capacitor by suppressing an interface reaction. SOLUTION: At least a lower electrode of the MIM capacitor 11 is formed of a conductive metal nitride film 6...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HAYASHI SHINICHIRO, YUKI KOICHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To realize a reduction in film thickness and an increase in capacity of a capacitor, and to improve reliability of an MIM capacitor by suppressing an interface reaction. SOLUTION: At least a lower electrode of the MIM capacitor 11 is formed of a conductive metal nitride film 6 having a stuffed crystal structure. With this configuration, the reduction in film thickness and the increase in capacity of the capacitor can be realized, and the reliability of the MIM capacitor can be improved by suppressing the interface reaction. COPYRIGHT: (C)2008,JPO&INPIT