MANUFACTURING METHOD OF CYLINDER TYPE CAPACITOR UTILIZING AMORPHOUS CARBON LAYER

PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor of a semiconductor device capable of preventing a bridge phenomenon between adjacent storage nodes in a wet dip-out process, even if the height of a cylinder is made high. SOLUTION: The method includes the steps of: forming an isolation structure of a lamination structure, with an intermediate layer inserted on a semiconductor substrate on which a contact plug is formed; forming an open area for opening a part of the contact plug by etching the isolation structure; forming a storage node 32A on the open area; forming a patterned intermediate layer 27A in which a part of the isolation structure is etched and a part of the storage node 32A is surrounded; supporting the storage node 32A; removing a residual part of the isolation structure; and removing the patterned intermediate layer and exposing all of an inner wall and an outer wall of the storage node 32A. COPYRIGHT: (C)2008,JPO&INPIT