METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide technology for bringing a probe into contact with a test pad corresponding to the probe by a desired contact pressure in probe inspection using a thin film probe formed by using manufacture technique of a semiconductor integrated circuit device. SOLUTION: The bending...

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1. Verfasser:	OKAYAMA MASAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	OKAYAMA MASAO
description	PROBLEM TO BE SOLVED: To provide technology for bringing a probe into contact with a test pad corresponding to the probe by a desired contact pressure in probe inspection using a thin film probe formed by using manufacture technique of a semiconductor integrated circuit device. SOLUTION: The bending rigidity of a first region in the circumference of the probe 7E of an arrangement end of the probe 7 (a plurality of contact terminals) arranging face distribution of the bending rigidity of a thin film sheet 2 (a first sheet) possessed by a probe card used for the probe inspection at a constant interval is small by being compared with the bending rigidity of a second region in the circumference of the probes 7A and 7B between the arrangement ends. COPYRIGHT: (C)2008,JPO&INPIT
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
title	METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
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