METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To eliminate the necessity of forming a mask in a process of performing processing for causing compressive stress to work on a channel region of a PMOS transistor. SOLUTION: In a silicon substrate 10, extensions 23 and 33 are formed on the side faces on both sides in the line w...

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Bibliographische Detailangaben

1. Verfasser:	SAKAMORI SHIGENORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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