METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To eliminate the necessity of forming a mask in a process of performing processing for causing compressive stress to work on a channel region of a PMOS transistor. SOLUTION: In a silicon substrate 10, extensions 23 and 33 are formed on the side faces on both sides in the line widthwise direction of gate electrodes formed on a PMOS transistor formation region RPMOSand on an NMOS transistor formation region RNMOS. The method of manufacturing the semiconductor device comprises a process wherein an oxide film is so formed on the surface of the silicon substrate 10 that the NMOS transistor formation region RNMOSmay be thicker than the PMOS transistor formation region RPMOS; a process of removing the oxide film in the PMOS transistor formation region RPMOSand the NMOS transistor formation region RNMOS, so that the silicon substrate 10 may be exposed only in the PMOS transistor formation region RPMOS; a process of etching the exposed surface of the silicon substrate 10 in the PMOS transistor formation region RPMOSto a predetermined depth to form a concave portion; and a process of forming an SiGe layer by selective epitaxial growth in the concave portion. COPYRIGHT: (C)2008,JPO&INPIT