METHOD OF MANUFACTURING THREE DIMENSIONAL SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a performance suitable for a current IC by improving crystallinity of a laser (re) crystallizing Si layer; in a method of manufacturing a three dimensional semiconductor device in which an insulating film is formed on an Si layer where a circuit of semiconductor elements is formed, a polycrystal or amorphous Si layer is stacked on the insulating film, the stacked layer is (re) crystallized by laser irradiation or scanning to form another circuit of semiconductor elements there, and these circuits are connected together. SOLUTION: Insulating films 17 and 26 are flattened by CMP. Polycrystal or amorphous Si layers 22 and 32 are stacked, which are irradiated/scanned with solid continuous wave laser having energy of 10 J/cm2or higher per radiation area. A laser annealing is applied just after it. COPYRIGHT: (C)2008,JPO&INPIT