SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF SEMICONDUCTOR (SEMICONDUCTOR CAPACITOR OF HOT (HYBRID ORIENTATION TECHNOLOGY) SUBSTRATE)

PROBLEM TO BE SOLVED: To provide a semiconductor structure and a method for forming the same. SOLUTION: The semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an electrically insulating region on top of the semiconductor substrate. The semiconduc...

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Bibliographische Detailangaben
Hauptverfasser: RADENS CARL JOHN, RAMACHANDRA DIVAKARUNI, CHENG KANGGUO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor structure and a method for forming the same. SOLUTION: The semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an electrically insulating region on top of the semiconductor substrate. The semiconductor structure further includes a first semiconductor region on top of and in direct physical contact with the semiconductor substrate. The semiconductor structure further includes a second semiconductor region on top of the insulating region. The semiconductor structure further includes a capacitor in the first semiconductor region and the semiconductor substrate. The semiconductor structure further includes a capacitor electrode contact in the second semiconductor region and the electrically insulating region. COPYRIGHT: (C)2008,JPO&INPIT