METHOD FOR TREATING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is app...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIOBARA HIDESHI, HAYAZAKI KEI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SHIOBARA HIDESHI
HAYAZAKI KEI
description PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is applied. While feeding gas of a predetermined flux rate on the wafer 15, the wafer 15 is heated for a prescribed time adjacently by arranging a hot plate 16 and the wafer 15. After this heat treatment, while passing gas heated higher than the sublimation temperature of a substance contained in the film including the solvent applied to the wafer 15, the wafer 15 is cooled to a temperature lower than the sublimation temperature of the substance contained in the film including the solvent. COPYRIGHT: (C)2008,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007335752A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007335752A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007335752A3</originalsourceid><addsrcrecordid>eNrjZJD1dQ3x8HdRcPMPUggJcnUM8fRzVwgOdQoOCXIMceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBubGxqbmpkaOxkQpAgDbqiGf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR TREATING SUBSTRATE</title><source>esp@cenet</source><creator>SHIOBARA HIDESHI ; HAYAZAKI KEI</creator><creatorcontrib>SHIOBARA HIDESHI ; HAYAZAKI KEI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is applied. While feeding gas of a predetermined flux rate on the wafer 15, the wafer 15 is heated for a prescribed time adjacently by arranging a hot plate 16 and the wafer 15. After this heat treatment, while passing gas heated higher than the sublimation temperature of a substance contained in the film including the solvent applied to the wafer 15, the wafer 15 is cooled to a temperature lower than the sublimation temperature of the substance contained in the film including the solvent. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20071227&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007335752A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20071227&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007335752A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIOBARA HIDESHI</creatorcontrib><creatorcontrib>HAYAZAKI KEI</creatorcontrib><title>METHOD FOR TREATING SUBSTRATE</title><description>PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is applied. While feeding gas of a predetermined flux rate on the wafer 15, the wafer 15 is heated for a prescribed time adjacently by arranging a hot plate 16 and the wafer 15. After this heat treatment, while passing gas heated higher than the sublimation temperature of a substance contained in the film including the solvent applied to the wafer 15, the wafer 15 is cooled to a temperature lower than the sublimation temperature of the substance contained in the film including the solvent. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD1dQ3x8HdRcPMPUggJcnUM8fRzVwgOdQoOCXIMceVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBubGxqbmpkaOxkQpAgDbqiGf</recordid><startdate>20071227</startdate><enddate>20071227</enddate><creator>SHIOBARA HIDESHI</creator><creator>HAYAZAKI KEI</creator><scope>EVB</scope></search><sort><creationdate>20071227</creationdate><title>METHOD FOR TREATING SUBSTRATE</title><author>SHIOBARA HIDESHI ; HAYAZAKI KEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007335752A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIOBARA HIDESHI</creatorcontrib><creatorcontrib>HAYAZAKI KEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIOBARA HIDESHI</au><au>HAYAZAKI KEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR TREATING SUBSTRATE</title><date>2007-12-27</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is applied. While feeding gas of a predetermined flux rate on the wafer 15, the wafer 15 is heated for a prescribed time adjacently by arranging a hot plate 16 and the wafer 15. After this heat treatment, while passing gas heated higher than the sublimation temperature of a substance contained in the film including the solvent applied to the wafer 15, the wafer 15 is cooled to a temperature lower than the sublimation temperature of the substance contained in the film including the solvent. COPYRIGHT: (C)2008,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2007335752A
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL
SEMICONDUCTOR DEVICES
SPRAYING OR ATOMISING IN GENERAL
TRANSPORTING
title METHOD FOR TREATING SUBSTRATE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T23%3A52%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIOBARA%20HIDESHI&rft.date=2007-12-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2007335752A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true