METHOD FOR TREATING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is app...

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Bibliographische Detailangaben
Hauptverfasser:	SHIOBARA HIDESHI, HAYAZAKI KEI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for treating a substrate which can decrease particles which adhere on the substrate to be treated. SOLUTION: In the method for treating the substrate, a wafer 15 (substrate to be treated) is heated in sheet-treatment to which a film containing solvent is applied. While feeding gas of a predetermined flux rate on the wafer 15, the wafer 15 is heated for a prescribed time adjacently by arranging a hot plate 16 and the wafer 15. After this heat treatment, while passing gas heated higher than the sublimation temperature of a substance contained in the film including the solvent applied to the wafer 15, the wafer 15 is cooled to a temperature lower than the sublimation temperature of the substance contained in the film including the solvent. COPYRIGHT: (C)2008,JPO&INPIT