METHOD OF FABRICATING CELL CAPACITOR UTILIZING HIGH-PERMITTIVITY MULTILAYER FILM

PROBLEM TO BE SOLVED: To provide a method of fabricating a DRAM cell capacitor having excellent electric characteristics. SOLUTION: The method of fabricating a cell capacitor includes: a step of forming polysilicon storage nodes 15 on a gate structure formed on a semiconductor substrate; a step of f...

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1. Verfasser:	SHIN TOGEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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