METHOD OF FABRICATING CELL CAPACITOR UTILIZING HIGH-PERMITTIVITY MULTILAYER FILM

PROBLEM TO BE SOLVED: To provide a method of fabricating a DRAM cell capacitor having excellent electric characteristics. SOLUTION: The method of fabricating a cell capacitor includes: a step of forming polysilicon storage nodes 15 on a gate structure formed on a semiconductor substrate; a step of forming a titanium nitride film 17 over the nodes 15; a step of etching back to have the titanium nitride film 17 left exclusively on side surfaces of the nodes 15; and a step of heat-treatment exposing to a nitrogen ambient gas. The method further includes: a step of depositing a tantalum pentoxide 18 on a product in the process; a step of heat-treating the process product exposing to an oxygen ambient gas to change the titanium nitride 18 to a titanium oxide and forming a silicon oxynitride on top surfaces of the nodes 15; and a step of forming a plate electrode 19. In addition, the change step includes a step of forming a silicon oxynitride on the side surfaces of the nodes 15 by means of heat-treatment. COPYRIGHT: (C)2008,JPO&INPIT