SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM

PROBLEM TO BE SOLVED: To provide a substrate with a transparent conductive film superior in acid resistance and with a small change in resistivity by heat treatment. SOLUTION: The substrate with the transparent conductive film has an Sn-containing indium oxide film formed by a sputtering method on a...

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Bibliographische Detailangaben
Hauptverfasser:	WADA HIROTADA, KIJIMA YOSHIBUMI, FUJISAWA AKIRA, ANZAKI TOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a substrate with a transparent conductive film superior in acid resistance and with a small change in resistivity by heat treatment. SOLUTION: The substrate with the transparent conductive film has an Sn-containing indium oxide film formed by a sputtering method on a substrate and is plasma treated. The Sn-containing indium oxide film has a specific resistance of 450 μΩ cm or less obtained by a four-probe method as defined by JIS K 7194 (1994) and its surface roughness Ra as defined by JIS B 0601 (2001) is 2 nm or less. COPYRIGHT: (C)2008,JPO&INPIT