MANUFACTURING METHOD OF SUBSTRATE HAVING TRANSPARENT CONDUCTIVE FILM

PROBLEM TO BE SOLVED: To provide a manufacturing method capable of reducing the specific resistance of an ITO film formed by a sputtering method, and enhancing the heat resistance and the acid resistance of the ITO film. SOLUTION: The manufacturing method of a substrate with a transparent conductive...

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Bibliographische Detailangaben
Hauptverfasser:	WADA HIROTADA, KIJIMA YOSHIBUMI, FUJISAWA AKIRA, ANZAKI TOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a manufacturing method capable of reducing the specific resistance of an ITO film formed by a sputtering method, and enhancing the heat resistance and the acid resistance of the ITO film. SOLUTION: The manufacturing method of a substrate with a transparent conductive film includes: a step of depositing an Sn-containing indium oxide film on a transparent substrate by a sputtering method; and a step of exposing the substrate having the Sn-containing indium oxide film in plasma generated from gaseous oxygen while the gas pressure of gaseous oxygen in a chamber is ≥300 Pa. It is preferable that the gas pressure is 400-1,700 Pa. COPYRIGHT: (C)2008,JPO&INPIT