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PROBLEM TO BE SOLVED: To solve the problem that, an ordinary Y2O3-sprayed film can not maintain its adhesion after the exposure of the corrosive gas to cause a film peeling when an electronic device is produced by using a gas high in corrosiveness such as Cl2. SOLUTION: An Y2O3-sprayed film is forme...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI MASAHITO, KISHI YUKIO, IGUCHI MASAHITO, SAITO CHIKASHI, SODEOKA MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To solve the problem that, an ordinary Y2O3-sprayed film can not maintain its adhesion after the exposure of the corrosive gas to cause a film peeling when an electronic device is produced by using a gas high in corrosiveness such as Cl2. SOLUTION: An Y2O3-sprayed film is formed by using an Y2O3raw material containing 0.2 to 5.0% SiO2, thereby obtaining the Y2O3-sprayed film hardly being corroded to a gas high in corrosiveness while maintaining plasma resistance, and having excellent adhesion. COPYRIGHT: (C)2008,JPO&INPIT