DEVELOPING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To prevent variation which occurs in a pattern size (opening size) even if regions different in numerical apertures coexist in a multistep developing method of a resist pattern. SOLUTION: In a process ST1, developer is supplied onto a resist film in a waver having the resist film where design patterns different in the numerical apertures are exposed on an upper face. In a second process ST2, development reaction is advanced on the resist film with supplied developer. In a process ST3, developer and resist dissolved in developer are shaken off and removed by rotating the wafer after development. In a process ST5, developer is removed, rinse liquid is supplied onto the developed resist film, and developer and resist dissolved in developer are washed away by rotating the wafer. Rotational speed of the wafer in the process ST3 is 1/2 or less of rotational speed of a substrate in the process ST5. COPYRIGHT: (C)2008,JPO&INPIT