SEMICONDUCTOR OPTICAL MODULATOR

PROBLEM TO BE SOLVED: To provide a semiconductor optical modulator, having a nin-type heterostructure that is superior in reliability and capable of significantly reducing the propagation loss of light, while having ample voltage breakdown characteristics. SOLUTION: The semiconductor optical modulat...

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Bibliographische Detailangaben
1. Verfasser:	KAYAO NORIHIDE
Format:	Patent
Sprache:	eng
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor optical modulator, having a nin-type heterostructure that is superior in reliability and capable of significantly reducing the propagation loss of light, while having ample voltage breakdown characteristics. SOLUTION: The semiconductor optical modulator has: an n-type InP clad layer 12, an InGaAsP clad layer 13, a core layer 14 comprising an InGaAlAs quantum well structure having electro-optical effects, an InGaAsP clad layer 15, an undoped InP clad layer 16, a p-type In0.4Al0.6As0.9Sn0.1barrier layer 17, and an n-type InP clad layer 18 deposited successively; the band gap of the clad layer 13 and the clad layer 15 is larger than the band gap of the core layer 14; the band cap of the clad layer 12 and the clad layer 16 is larger than the band gap of the clad layer 13 and clad layer 15; and the barrier layer 17 is formed of p-type In0.4Al0.6As0.9Sb0.1; and the clad layer 18 is formed of n-type InP. COPYRIGHT: (C)2008,JPO&INPIT