CRUSHING METHOD OF POLYCRYSTALLINE SILICON

CRUSHING METHOD OF POLYCRYSTALLINE SILICON

PROBLEM TO BE SOLVED: To provide a crushing method simply crushing a large amount of polycrystalline silicon cast chips consisting of columnar structure cast by one-way solidification into desired particle sizes with a preferable yield, causing little contamination in crushing, and easy to remove co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HIYOSHI MASATAKA, DONOMAE HITOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRUSHING, PULVERISING, OR DISINTEGRATING
CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
MILLING GRAIN
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PREPARATORY TREATMENT OF GRAIN FOR MILLING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a crushing method simply crushing a large amount of polycrystalline silicon cast chips consisting of columnar structure cast by one-way solidification into desired particle sizes with a preferable yield, causing little contamination in crushing, and easy to remove contamination in crushing. SOLUTION: In this crushing method of polycrystalline silicon, at least one face among six surfaces 6 of rectangular parallelepiped polycrystalline silicon cast chips by one-way solidification is crushed after cutting in one or more slits in the direction not crossing the growing direction of the columnar structure formed by one-way solidification. COPYRIGHT: (C)2008,JPO&INPIT