METHOD FOR DETERMINING ELECTRICALLY ACTIVE DOPANT DENSITY PROFILE IN ULTRA-SHALLOW JUNCTION (USJ) STRUCTURE

PROBLEM TO BE SOLVED: To provide a method and equipment for measuring dopant density more accurately than the conventional technology. SOLUTION: In the method of determining whether a semiconductor wafer or a sample 10 has desirable density of electrically active dopant, minimum and maximum values of capacitance associated with the semiconductor material forming the wafer or the sample 10 are measured at a first point adjacent to a topside surface 16, and those are measured at a second point adjacent to a beveled surface 24 which is defined by removal of an upper portion of the topside surface 16. As a function of the minimum and maximum values of capacitance measured at each point and the depth on or from the topside surface 16 where each point resides, the electrically active dopant density of the semiconductor wafer or the sample 10 can be determined. COPYRIGHT: (C)2008,JPO&INPIT