METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor device capable of preventing burrs from occurring even if resin containing fillers are used that are small in maximum grain diameter. SOLUTION: The method of manufacturing the semiconductor device is carried out in such a mann...
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| creator | KURODA SOJI MISUMI KAZUYUKI BANDO KOJI SHIBATA JUN YASUDA NAOTSUGU |
| description | PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor device capable of preventing burrs from occurring even if resin containing fillers are used that are small in maximum grain diameter. SOLUTION: The method of manufacturing the semiconductor device is carried out in such a manner that a substrate 1 with two or more chips 11 and 13 laminated thereon is placed on a lower mold 3, and a cavity 4 formed by sandwiching the substrate 1 between the lower mold 3 and an upper mold 2 is filled up with resin for sealing up the chips 11 and 13. A first groove 31 exhausts air from the cavity 4 when the chips 11 and 13 are sealed up with resin, and is cut in the surface of the substrate 1 on which the chips 11 and 13 are mounted; resin containing the fillers whose maximum grains have a diameter smaller than the height and width of the first groove 31 is used; and the ratio of length to sectional area (length/sectional area) of the first groove 31 is set at 1.4 or above. COPYRIGHT: (C)2008,JPO&INPIT |
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SOLUTION: The method of manufacturing the semiconductor device is carried out in such a manner that a substrate 1 with two or more chips 11 and 13 laminated thereon is placed on a lower mold 3, and a cavity 4 formed by sandwiching the substrate 1 between the lower mold 3 and an upper mold 2 is filled up with resin for sealing up the chips 11 and 13. A first groove 31 exhausts air from the cavity 4 when the chips 11 and 13 are sealed up with resin, and is cut in the surface of the substrate 1 on which the chips 11 and 13 are mounted; resin containing the fillers whose maximum grains have a diameter smaller than the height and width of the first groove 31 is used; and the ratio of length to sectional area (length/sectional area) of the first groove 31 is set at 1.4 or above. 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| subjects | AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
| title | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
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