METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor device capable of preventing burrs from occurring even if resin containing fillers are used that are small in maximum grain diameter. SOLUTION: The method of manufacturing the semiconductor device is carried out in such a mann...

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Bibliographische Detailangaben
Hauptverfasser: KURODA SOJI, MISUMI KAZUYUKI, BANDO KOJI, SHIBATA JUN, YASUDA NAOTSUGU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor device capable of preventing burrs from occurring even if resin containing fillers are used that are small in maximum grain diameter. SOLUTION: The method of manufacturing the semiconductor device is carried out in such a manner that a substrate 1 with two or more chips 11 and 13 laminated thereon is placed on a lower mold 3, and a cavity 4 formed by sandwiching the substrate 1 between the lower mold 3 and an upper mold 2 is filled up with resin for sealing up the chips 11 and 13. A first groove 31 exhausts air from the cavity 4 when the chips 11 and 13 are sealed up with resin, and is cut in the surface of the substrate 1 on which the chips 11 and 13 are mounted; resin containing the fillers whose maximum grains have a diameter smaller than the height and width of the first groove 31 is used; and the ratio of length to sectional area (length/sectional area) of the first groove 31 is set at 1.4 or above. COPYRIGHT: (C)2008,JPO&INPIT