ABRASIVE COMPOSITION FOR METAL CHEMICAL MECHANICAL POLISHING

PROBLEM TO BE SOLVED: To provide an abrasive composition for a metal CMP having a satisfcatory polishing speed while suppressing an etching in a metal CMP (Chemical Mechanical Polishing), especially in a copper CMP, and is excellent in an abrasive selectivity to a barrier layer. SOLUTION: A polishin...

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Bibliographische Detailangaben
Hauptverfasser:	TAKAGI HIROTOSHI, OKIMOTO YOSHIO, MIHARA SATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an abrasive composition for a metal CMP having a satisfcatory polishing speed while suppressing an etching in a metal CMP (Chemical Mechanical Polishing), especially in a copper CMP, and is excellent in an abrasive selectivity to a barrier layer. SOLUTION: A polishing abrasive grain is the abrasive composition for the metal CMP including 0.01 to 10 mass wt.% water distributed plyurethane. COPYRIGHT: (C)2008,JPO&INPIT