METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal, by which exfoliation of a crystal phase formed on the inner surface of a quartz crucible can be prevented and the silicon single crystal having a large diameter can be stably pulled. SOLUTION: In the method for manufacturing the silicon single crystal by a CZ method, comprising melting polycrystalline silicon in the quartz crucible 1 and pulling the single crystal 11 from a melt 7, the silicon single crystal is grown by using, as the quartz crucible, a synthetic quartz crucible, then applying a negative voltage to the quartz crucible side by a direct current electric power supply 10, and at the same time, adding barium to the polycrystalline silicon in the quartz crucible. It is preferable that concentration of barium in the silicon melt is 0.1-2 ppm, and the voltage to be applied is 1-30 V. COPYRIGHT: (C)2008,JPO&INPIT