METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, AND ORGANIC THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing an organic thin film transistor with good operating characteristics, and an organic thin film transistor. SOLUTION: A method of manufacturing an organic thin film transistor having, on a substrate 1, a source electrode 7s, a gate...

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Bibliographische Detailangaben
Hauptverfasser: YAMADA JUN, MASAZUMI NAOKI, HIRAO TAKEYA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing an organic thin film transistor with good operating characteristics, and an organic thin film transistor. SOLUTION: A method of manufacturing an organic thin film transistor having, on a substrate 1, a source electrode 7s, a gate electrode 3, a drain electrode 7d, an insulating film 5, and an organic semiconductor layer is provided. The method comprises: a step of forming the source electrode 7s and the drain electrode 7d so that at least one of the source electrode and the drain electrode has an outer circumference which is circular or polygonal and that the other electrode has an inner circumference facing the outer circumference, the shape of which is substantially concentric with the electrode having the outer circumference; and a step of forming the organic semiconductor layer for connecting the source electrode 7s and the drain electrode 7d to each other by a process of dropping an organic semiconductor material. COPYRIGHT: (C)2008,JPO&INPIT