COMPOSITE TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device in which electric connection is obtained without fail while leaving a wide gap between upper and lower semiconductor devices, heat generated from the lower semiconductor device is efficiently radiated, and further a mulfunction caused by electromagnetic noise is prevented, and a small semiconductor device can be mounted to the upper side, and to provide a method for manufacturing the semiconductor device. SOLUTION: This composite type semiconductor device is constituted by connecting an external connection terminal of a first semiconductor device and an external connection terminal of a second semiconductor device with a lead frame. This method for manufacturing the composite type semiconductor device comprises a process (A) wherein an attached lead frame formed into a solid form which is fixed to a metal plate with a disjoin-preventing tape is connected to a connection terminal formed on an opposite surface with respect to the external connection terminal of the first semiconductor device, and a process (B) wherein the external connection terminal of the second semiconductor device is connected to the reverse end of the lead frame. COPYRIGHT: (C)2008,JPO&INPIT