MOLD AND METHOD OF MANUFACTURING MOLD

PROBLEM TO BE SOLVED: To provide a low-cost and high-precision mold capable of forming a plurality of patterns at once, and a method of manufacturing the mold. SOLUTION: A first layer film 120 is formed on the surface of a substrate 110 and a second layer film 130 is formed on the surface of the fir...

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Bibliographische Detailangaben
Hauptverfasser:	KITADA MINORU, YUSA SATOSHI, ARITSUKA YUKI, ISHIKAWA MIKIO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT THEREOF MATERIALS THEREFOR NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a low-cost and high-precision mold capable of forming a plurality of patterns at once, and a method of manufacturing the mold. SOLUTION: A first layer film 120 is formed on the surface of a substrate 110 and a second layer film 130 is formed on the surface of the first layer film 120, by direct bonding by interface activation. The substrate 110, the first layer film 120 and the second layer film 130 are formed of materials of the same substance and have different plane directions. Then, a resist layer 140 is formed on the surface of the second layer film 130 and the surface of the resist layer 140 is irradiated with an electron beam A for exposure. Then, a dry etching or a wet etching is applied to the second layer film 130 by using a pattern 150 formed on the resist layer 140 as a mask. Next, the resist layer 140 is peeled to form a pattern constituted of unevenness on the surface of the second layer film 130. COPYRIGHT: (C)2008,JPO&INPIT