ENHANCED LITHOGRAPHY PATTERNING PROCESS AND SYSTEM

PROBLEM TO BE SOLVED: To provide a plurality of features provided by a single exposing process and characterized by an about half interval to a hard mask using a single hard mask etching process and without a photoresist treatment for defining the hard mask. SOLUTION: This system and process is a do...

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Hauptverfasser:	LALBAHADOERSING SANJAY, MUSA SAMI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plurality of features provided by a single exposing process and characterized by an about half interval to a hard mask using a single hard mask etching process and without a photoresist treatment for defining the hard mask. SOLUTION: This system and process is a double patterning system and process using a carbon-based hard mask. This double patterning system provides a means for forming a hard mask feature with a feature interval less than a minimum interval with which the hard mask can be printed according to a single exposure, by of a single hard mask etching process. COPYRIGHT: (C)2008,JPO&INPIT