POWER SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a power semiconductor device which can effectively insulate heat generated from a power semiconductor element having a substrate made of silicon carbide by packaging the power semiconductor element with an additional reactive silicone resin containing hollow glass po...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a power semiconductor device which can effectively insulate heat generated from a power semiconductor element having a substrate made of silicon carbide by packaging the power semiconductor element with an additional reactive silicone resin containing hollow glass powder. SOLUTION: The power semiconductor device 1A is provided with a power semiconductor element 2 having a substrate made of silicon carbide, a ceramic substrate 4 which is arranged opposite to the power semiconductor element 2 and wherein a wiring pattern is formed to send/receive an electric signal between the power semiconductor element 2 and the outside, a connection ball 3 which is interposed between the power semiconductor element 2 and the ceramic substrate 4 to electrically connect them with each other, and an additional reactive silicone resin 8 which contains hollow glass powder 7 and packages the power semiconductor element 2 and the connection ball 3 and the ceramic substrate 4. COPYRIGHT: (C)2008,JPO&INPIT |
|---|