NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with high reliability and sufficient performance in write/erasure, read and storage by suppressing threshold voltage variations due to electric charge detrap in an electric charge holding state after write/erasure even at a reduced drive voltage. SOLUTION: The nonvolatile semiconductor memory device is provided with: p-type source-drain regions 12 provided to an n-type semiconductor region 11; an electric charge storage layer 13 comprising a high discrimination circuit constant material provided between the p-type source-drain regions 12; and a control gate electrode 14 provided on the electric charge storage layer 13 and selected from a metallic group conductor material and a p-type semiconductor material including at least Si and Ge. COPYRIGHT: (C)2008,JPO&INPIT