DIAMOND STRUCTURE AND ITS WORKING METHOD

PROBLEM TO BE SOLVED: To provide a diamond structure where planarity of an etching face is 2 nm or below and an inclined angle of a side between a side of an upper face and a base is within a range of 60° to 100°, and to provide a diamond etching method with which an etching selection ratio with a m...

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Hauptverfasser:	SHIKADA SHINICHI, YAMADA TAKATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a diamond structure where planarity of an etching face is 2 nm or below and an inclined angle of a side between a side of an upper face and a base is within a range of 60° to 100°, and to provide a diamond etching method with which an etching selection ratio with a mask is set to be a range of 10 to 80. SOLUTION: In the diamond structure, planarity of the etching face is 2 nm or below and the inclined angle of the side between the side of the upper face and the base is within the range of 60° to 100°, and the diamond structure has height of 10 μm or above. In the diamond etching method, a mask of metal oxide selected from a silicon oxide film, aluminum oxide, titanium oxide, tungsten oxide and molybdenum oxide is given onto diamond. Plasma etching is performed in an atmosphere comprising oxygen gas. Fluorine gas or chlorine gas is added to oxygen gas and flattening plasma etching is performed. COPYRIGHT: (C)2008,JPO&INPIT