CAPACITOR AND METHOD OF FORMING THE SAME

CAPACITOR AND METHOD OF FORMING THE SAME

PROBLEM TO BE SOLVED: To provide a method of forming a ferroelectric film capacitor in which a sufficient yield for adapted to ULSI chips can be secured. SOLUTION: In one embodiment, after the formation of a first ferroelectric film as the capacitor ferroelectric film, an extremely thin second ferro...

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Bibliographische Detailangaben
1. Verfasser: NISHIOKA YASUKUNI
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of forming a ferroelectric film capacitor in which a sufficient yield for adapted to ULSI chips can be secured. SOLUTION: In one embodiment, after the formation of a first ferroelectric film as the capacitor ferroelectric film, an extremely thin second ferroelectric film is deposited to fill a cavity generated between the crystal grains, thereby forming a capacitor in which a leakage current is reduced and a yield is high. In the other embodiment, the cavity is filled with an insulating layer. COPYRIGHT: (C)2007,JPO&INPIT