METHOD OF FORMING BUMP AND CONNECTOR STRUCTURE HAVING BUMP

PROBLEM TO BE SOLVED: To provide a method of forming a bump that electrically connects a semiconductor chip and a mounting board and also to provide a connector provided with the bump. SOLUTION: A diffusion barrier film pattern is formed on a substrate on which a conductive pad is formed. A seed fil...

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Bibliographische Detailangaben
Hauptverfasser: JANG WOO-JIN, PARK KWANG-MYEON
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of forming a bump that electrically connects a semiconductor chip and a mounting board and also to provide a connector provided with the bump. SOLUTION: A diffusion barrier film pattern is formed on a substrate on which a conductive pad is formed. A seed film is formed on the substrate which has the diffusion barrier film pattern and the conductive pad. A conductive bump is formed on the seed film. The seed film is patterned using the conductive bump as an etching mask. The diffusion barrier film pattern is formed by dry-etching a diffusion barrier film and the seed film pattern is formed by wet-etching a seed film. The conductive pad can be formed on the substrate either using a damascene process or using an electroplating process. The dimension of the bump can be reduced, because the diffusion barrier film pattern can be restrained from being undercut, thereby enabling fabrication of packages which are ensured to have excellent operation performances. COPYRIGHT: (C)2007,JPO&INPIT