INTERCONNECT STRUCTURE WITH BARRIER-REDUNDANCY CONSTITUENT, AND METHOD OF FORMING INTERCONNECT STRUCTURE

PROBLEM TO BE SOLVED: To provide an interconnect structure having a barrier-redundancy constituent, and a method of forming the interconnect structure. SOLUTION: A via diffusion barrier 30 exists on a portion of a conductive line 20. A conductive material 54 existing on a portion having no barrier 30 on the conductive line 20 provides an electrical path between a conductive line diffusion barrier 22 and the via diffusion barrier 30. Accordingly, an internal barrier-redundancy constituent is formed, using the conductive material 54, the conductive line diffusion barrier 22 and the via diffusion barrier 30. This electrical path to be provided by the barrier-redundancy constituent can avoid a sudden circuit open resulted from EM failure of the via bottom. Thus, after the EM failure is detected by a monitoring device, the barrier-redundancy constituent for providing a sufficient time for chip replacement or system operation adjustment is provided to the interconnect structure. COPYRIGHT: (C)2007,JPO&INPIT