PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which etching selection ratio for an underlying layer is high when the upper layer of a multilayer film deposited by CVD is etched. SOLUTION: The process for fabricating a semiconductor device comprises a step for f...

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Hauptverfasser: KAMESHIMA TAKASUE, SHIMAYAMA TSUTOMU, OKAMOTO MASAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KAMESHIMA TAKASUE
SHIMAYAMA TSUTOMU
OKAMOTO MASAKI
description PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which etching selection ratio for an underlying layer is high when the upper layer of a multilayer film deposited by CVD is etched. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a first porous insulating film 12A on a substrate 11, a step for forming a second insulating film 13 containing porogen B' composed of a hydrocarbon compound in the skeletal structure composed of an inorganic material on the first porous insulating film 12A such that the content of carbon becomes higher than that of the first porous insulating film 12A, and a step for etching the second insulating film 13 until the first porous insulating film 12A is reached. COPYRIGHT: (C)2007,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007250706A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007250706A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007250706A3</originalsourceid><addsrcrecordid>eNrjZNAJCPJ3dg0OVnDzD1Jwc3QK8nR2DPH0c1cIdvX1dPb3cwl1DgHKuLiGeTq78jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMDcyNTA3MDM0djohQBAOrlJbA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KAMESHIMA TAKASUE ; SHIMAYAMA TSUTOMU ; OKAMOTO MASAKI</creator><creatorcontrib>KAMESHIMA TAKASUE ; SHIMAYAMA TSUTOMU ; OKAMOTO MASAKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which etching selection ratio for an underlying layer is high when the upper layer of a multilayer film deposited by CVD is etched. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a first porous insulating film 12A on a substrate 11, a step for forming a second insulating film 13 containing porogen B' composed of a hydrocarbon compound in the skeletal structure composed of an inorganic material on the first porous insulating film 12A such that the content of carbon becomes higher than that of the first porous insulating film 12A, and a step for etching the second insulating film 13 until the first porous insulating film 12A is reached. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070927&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007250706A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070927&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007250706A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAMESHIMA TAKASUE</creatorcontrib><creatorcontrib>SHIMAYAMA TSUTOMU</creatorcontrib><creatorcontrib>OKAMOTO MASAKI</creatorcontrib><title>PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which etching selection ratio for an underlying layer is high when the upper layer of a multilayer film deposited by CVD is etched. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a first porous insulating film 12A on a substrate 11, a step for forming a second insulating film 13 containing porogen B' composed of a hydrocarbon compound in the skeletal structure composed of an inorganic material on the first porous insulating film 12A such that the content of carbon becomes higher than that of the first porous insulating film 12A, and a step for etching the second insulating film 13 until the first porous insulating film 12A is reached. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAJCPJ3dg0OVnDzD1Jwc3QK8nR2DPH0c1cIdvX1dPb3cwl1DgHKuLiGeTq78jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMDcyNTA3MDM0djohQBAOrlJbA</recordid><startdate>20070927</startdate><enddate>20070927</enddate><creator>KAMESHIMA TAKASUE</creator><creator>SHIMAYAMA TSUTOMU</creator><creator>OKAMOTO MASAKI</creator><scope>EVB</scope></search><sort><creationdate>20070927</creationdate><title>PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE</title><author>KAMESHIMA TAKASUE ; SHIMAYAMA TSUTOMU ; OKAMOTO MASAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007250706A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAMESHIMA TAKASUE</creatorcontrib><creatorcontrib>SHIMAYAMA TSUTOMU</creatorcontrib><creatorcontrib>OKAMOTO MASAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAMESHIMA TAKASUE</au><au>SHIMAYAMA TSUTOMU</au><au>OKAMOTO MASAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE</title><date>2007-09-27</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which etching selection ratio for an underlying layer is high when the upper layer of a multilayer film deposited by CVD is etched. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a first porous insulating film 12A on a substrate 11, a step for forming a second insulating film 13 containing porogen B' composed of a hydrocarbon compound in the skeletal structure composed of an inorganic material on the first porous insulating film 12A such that the content of carbon becomes higher than that of the first porous insulating film 12A, and a step for etching the second insulating film 13 until the first porous insulating film 12A is reached. COPYRIGHT: (C)2007,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T03%3A57%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAMESHIMA%20TAKASUE&rft.date=2007-09-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2007250706A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true