PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which etching selection ratio for an underlying layer is high when the upper layer of a multilayer film deposited by CVD is etched. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a first porous insulating film 12A on a substrate 11, a step for forming a second insulating film 13 containing porogen B' composed of a hydrocarbon compound in the skeletal structure composed of an inorganic material on the first porous insulating film 12A such that the content of carbon becomes higher than that of the first porous insulating film 12A, and a step for etching the second insulating film 13 until the first porous insulating film 12A is reached. COPYRIGHT: (C)2007,JPO&INPIT