CHEMICAL VAPOR DEPOSITION APPARATUS, AND GAS FLOW PASSAGE DEVICE

PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus capable of feeding a gas flow while suppressing dispersion in the flow rate on a substrate surface in a reaction chamber by receiving a gas to be fed from gas feed pipes. SOLUTION: A gas flow passage structure for receiving a gas...

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Hauptverfasser: HIRANO HIKARI, NAGASAWA AKISUKE
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus capable of feeding a gas flow while suppressing dispersion in the flow rate on a substrate surface in a reaction chamber by receiving a gas to be fed from gas feed pipes. SOLUTION: A gas flow passage structure for receiving a gas to be fed from gas feed pipes 90, 91 and conveying and feed the gas into a reaction chamber 100 comprises first stage parts 10, 20 and second stage parts 40, 41 for discharging the decelerated gas flow in a diffusing manner. The second stage part has bent flat-plate gas flow rate spaces 42-46 having two or more bent portions at which the gas flow streamline is bent by ≥45°. The sectional area at the section normal to the gas flow streamline of the gas flow passage space is increased on the upstream side and the downstream side in at least one bent portion. COPYRIGHT: (C)2007,JPO&INPIT