METHOD FOR RECHARGING SOLID RAW MATERIAL

PROBLEM TO BE SOLVED: To provide a solid raw material-recharging method which includes filling a quartz crucible storing a crystal melt with a solid raw material in a production apparatus of a silicon single crystal, controls the dislocation-developing probability of a crown by controlling the time...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HISAICHI TOSHIO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a solid raw material-recharging method which includes filling a quartz crucible storing a crystal melt with a solid raw material in a production apparatus of a silicon single crystal, controls the dislocation-developing probability of a crown by controlling the time required for solidifying the melt, and which enables to suppress the concentration of carbon impurities in the single crystal. SOLUTION: When the time from generation of solidification on the melt surface in a quartz crucible to the solidification of the melt surface corresponding to 80% of its entire surface is defined as Y(min), and also the inner diameter of the crucible is defined as X(mm), power of a heater is controlled so as to satisfy the relational expression, 0.0056X+0.6≤Y≤0.144X+5. After the melt surface corresponding to 80% of its whole is solidified, the rate of melt surface solidification is raised, and in such a stage that ≥90% of the whole melt surface is solidified, the solid raw material is filled in the crucible while increasing power of the heater. COPYRIGHT: (C)2007,JPO&INPIT