SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE USING IT

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE USING IT

PROBLEM TO BE SOLVED: To provide a compound semiconductor device such as SBD, HEMT, MESFET, etc. having a less warp and a higher withstand voltage. SOLUTION: The semiconductor device comprises a semiconductor base substance 1, at least first and second electrodes 2 and 3 arranged on one main surface...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: GOTO HIROICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a compound semiconductor device such as SBD, HEMT, MESFET, etc. having a less warp and a higher withstand voltage. SOLUTION: The semiconductor device comprises a semiconductor base substance 1, at least first and second electrodes 2 and 3 arranged on one main surface thereof, and an auxiliary electrode 4 arranged on the other main surface thereof. The semiconductor base substance 1 has a first group III-V compound semiconductor region 7 for constituting the main portion of the semiconductor device on one main surface of a silicon substrate 6, and further has a second group III-V compound semiconductor region 8 for improving the warp and the withstand voltage on the other main surface thereof. COPYRIGHT: (C)2007,JPO&INPIT