READ-OUT CIRCUIT OF MAGNETIC MEMORY

PROBLEM TO BE SOLVED: To provide a read-out circuit of a magnetic memory, which can accurately read out information. SOLUTION: Voltages V1 and V2 corresponding to a resistance value (output value) of a magneto-resistance effect element MR are input to a coincidence determining circuit 5. When input...

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1. Verfasser: KURISU MASAFUMI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a read-out circuit of a magnetic memory, which can accurately read out information. SOLUTION: Voltages V1 and V2 corresponding to a resistance value (output value) of a magneto-resistance effect element MR are input to a coincidence determining circuit 5. When input values are coincident, the coincident determining circuit 5 outputs a logic level "L" (=0), when they are not coincident, the circuit outputs a logic level "H" (=1). That is, when the initial voltage V1 coincides with the voltage V2 in which "0" is written intentionally and stored, "0" is output, when they are not coincident, "1" is output. This is the data stored initially in the magneto-resistance effect element MR. When they are not coincident, original data is rewritten to "1". COPYRIGHT: (C)2007,JPO&INPIT