MOLECULAR GLASS PHOTORESIST

PROBLEM TO BE SOLVED: To provide a new photoresist suitable for extreme ultraviolet (EUV) exposure. SOLUTION: Some low-molecular molecular glass having a new structure designed for use as a photoresist in semiconductor lithography is used. The photoresist is a low-molecular-weight organic material h...

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Hauptverfasser:	EKMINI ANUJA DE SILVA, DREW C FORMAN, CHRISTOPHER K OBER
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a new photoresist suitable for extreme ultraviolet (EUV) exposure. SOLUTION: Some low-molecular molecular glass having a new structure designed for use as a photoresist in semiconductor lithography is used. The photoresist is a low-molecular-weight organic material having a significantly higher glass transition temperature than room temperature and showing a tendency to crystallize hardly. The molecular glass photoresist has a tetrahedral silane molecular nucleus having four phenyl groups or four biphenyl groups. Each phenyl group lateral to each phenyl group or biphenyl group has a methoxy group or a hydroxy group in the 3- or 4-position. With respect to the implementation of the biphenyl, the bond may be meta-meta, meta-para, para-para or para-meta. COPYRIGHT: (C)2007,JPO&INPIT