METHOD FOR DEPOSITING TRANSPARENT ELECTRODE FILM AND METHOD FOR PRODUCING SOLAR BATTERY

PROBLEM TO BE SOLVED: To provide a method for producing a transparent electrode film by which the transparent electrode film simultaneously satisfying high visible light transmittance, low resistivity, and high haze can be deposited. SOLUTION: The method for producing the transparent electrode film...

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Bibliographische Detailangaben
Hauptverfasser:	TAKANO GIYOUMI, SASAGAWA EISHIRO, YAMAUCHI YASUHIRO, UCHIHASHI KAZUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a transparent electrode film by which the transparent electrode film simultaneously satisfying high visible light transmittance, low resistivity, and high haze can be deposited. SOLUTION: The method for producing the transparent electrode film comprises : (a) a process for depositing a first transparent electroconductive film on a substrate by diluting a first raw material gas containing SnCl4and H2O in a first O/Sn ratio at a first dilution rate by an inert gas and supplying the diluted first raw material gas; (b) a process for depositing a second transparent electroconductive film on the first transparent electroconductive film by diluting a second raw material gas containing SnCl4and H2O in a second O/Sn ratio at a second dilution rate by an inert gas and supplying the diluted gas; and (c) a process for depositing a third transparent electroconductive film on the second transparent electroconductive film by diluting a third raw material gas containing SnCl4and H2O in a third O/Sn ratio at a third dilution rate by an inert gas and supplying the diluted gas. The first O/Sn ratio is larger than either of the second and third O/Sn ratios. The first dilution rate is larger than either of the second and the third dilution rates. COPYRIGHT: (C)2007,JPO&INPIT