LIGHT EMITTING DIODE USING METAL DIFFUSION BONDING TECHNOLOGY AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a light emitting diode using a metal diffusion bonding technology capable of increasing reliability and performance of a product, and to provide a method therefor. SOLUTION: The light emitting diode using a metal diffusion bonding technology comprises: a second conductive type permanent substrate 30 formed on a second conductive type electrode 32; an ohmic contact metal layer formed on the permanent substrate 30; a metal diffusion bonding layer formed on the ohmic contact metal layer; an ohmic contact surface 25 formed on the metal diffusion bonding layer 40; an AlInGaP semiconductor epitaxial layer 20 that is formed on the ohmic contact surface 25, and has a roughened peak surface; an insulating transparent layer 24 that is disposed on a partial surface between the ohmic contact surface 25 and the bottom surface of the AlInGaP semiconductor epitaxial layer 20; and a first conductive type electrode 50 that is formed on a partial surface of a first conductive type first constraint layer 21 of the AlInGaP semiconductor epitaxial layer 20, and is disposed on a position corresponding to the insulating transparent layer 24. COPYRIGHT: (C)2007,JPO&INPIT