METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which double exposure is used to realize microfabrication. SOLUTION: When manufacturing a semiconductor device that is provided with a memory cell area including a first pattern, and a peripheral circuit area including a second pattern; a resist film is formed on the area of a substrate including the memory cell area and the peripheral circuit area. Then, when exposing the resist film by multiple exposure including first exposure for forming a latent image corresponding to the first pattern in the resist film on the memory cell area, and second exposure for forming a latent image corresponding to the second pattern in the resist film on the peripheral circuit area; a boundary area 12 between the first and second exposures on the resist film is set on an element isolation area 10' between guard rings 5 and 7, the resists film is developed to form a resist pattern, then the resist pattern is used as a mask, and a substrate to be processed is etched. COPYRIGHT: (C)2007,JPO&INPIT