PLASMA ETCHING APPARATUS AND METHOD OF FORMING INNER WALL IN PLASMA PROCESSING CHAMBER

PROBLEM TO BE SOLVED: To prevent aluminum base materials forming an etching chamber or components therein from being corroded, as well as the degradation of productivity due to scattering thermal spraying in a plasma etching apparatus. SOLUTION: In the plasma etching apparatus, an anode oxide film i...

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Hauptverfasser: KAWAGUCHI TADAYOSHI, FURUSE MUNEO, ARAI MASATSUGU, SUMIYA MASANORI, MATANO KATSUJI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To prevent aluminum base materials forming an etching chamber or components therein from being corroded, as well as the degradation of productivity due to scattering thermal spraying in a plasma etching apparatus. SOLUTION: In the plasma etching apparatus, an anode oxide film is arranged in the etching processing chamber made of aluminum alloy and between components in the etching processing chamber and a ceramics thermal spraying film superior in plasma resistance. The anode oxide film is made to be 5 μm or less in thickness and have heat resistance. COPYRIGHT: (C)2007,JPO&INPIT